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The BBY5705WE6327HTSA1 is a silicon hyperabrupt tuning diode from Infineon Technologies, housed in the SOT-323 surface-mount package. It features a common cathode configuration with an integrated low-inductance series resistor of 1.4 nH. The device supports a maximum reverse voltage of 10 V and a forward current of 20 mA. At 1 MHz, the capacitance ranges from 18.6 pF at 1 V to 5.5 pF at 4 V, yielding a capacitance ratio of up to 4.5. Designed for low tuning voltage operation, it exhibits excellent linearity and high Q factors suitable for mobile communications.
Verify the component against official Infineon datasheets to confirm electrical parameters and package dimensions. Ensure the ordering suffix matches the required tape-and-reel quantity and marking specifications. Confirm RoHS compliance status and AEC-Q101 qualification requirements prior to finalizing procurement orders.
Select this component when designing circuits requiring high linearity and low series resistance for frequency tuning. The common cathode configuration allows for differential or balanced circuit topologies. Verify that the operating temperature range of -55°C to 125°C aligns with the specific environmental conditions of the target application.
This part belongs to the BBY57 series of silicon tuning diodes manufactured by Infineon Technologies. The series includes variants with different packages and configurations, such as single diodes in SC79 or TSLP-2 packages. The BBY5705WE6327HTSA1 specifically utilizes the SOT-323 package with a common cathode arrangement.
Direct substitutes within the same family include the BBY57-02L, BBY57-02V, and BBY57-02W. These alternatives share similar electrical characteristics but differ in package type and internal series inductance values.