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BC237G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.1A TO92. Review the specifications below when checking this part for your BOM.
The BC237G is an NPN silicon small signal amplifier transistor manufactured by onsemi. It operates with a continuous collector current of 100 mA and features a collector-emitter voltage rating of 45 Vdc. The device provides a minimum DC current gain (hFE) of 120 at IC = 2.0 mA and VCE = 5.0 V, extending up to 800 for the BC237B variant. It utilizes a TO-92 plastic package with three pins arranged as Collector, Base, and Emitter. Total power dissipation reaches 350 mW in free air and 1.0 W when mounted to a heatsink.
Verify the specific suffix 'G' indicates lead-free compliance per manufacturer documentation. Confirm package style matches Case 29-11 specifications. Ensure ordering quantities align with bulk or tape-and-reel availability options provided in the official datasheet. Cross-reference part numbers with authorized distributors to ensure authenticity.
Select this component for designs requiring moderate current handling and high voltage ratings within a compact through-hole footprint. Compare hFE ranges against circuit requirements, noting variations between standard and B-grade variants. Evaluate thermal resistance values if operating near maximum power dissipation limits in enclosed environments.
This transistor belongs to the BC237 family, which includes variants like BC237B and BC237C offering different gain characteristics. It serves as a complementary counterpart to PNP devices such as the BC327 series. The TO-92 form factor ensures compatibility with standard breadboards and PCB layouts used in consumer electronics and industrial control modules.
BC237BRL1G
Viewed from the flat side with leads down, Pin 1 is Collector, Pin 2 is Base, and Pin 3 is Emitter.
The BC237G has a higher collector-emitter breakdown voltage of 45 V compared to the BC239C's 25 V rating.
The noise figure is typically 2.0 dB when measured at IC = 0.2 mA, VCE = 5.0 V, and RS = 2.0 kΩ.
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