BC238_J35Z

Single Bipolar Transistors Overview

The BC238_J35Z is an NPN silicon small signal transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 25 V and a continuous collector current rating of 100 mA. The device is housed in a TO-92 plastic package with three through-hole terminals. It exhibits a minimum DC current gain (hFE) of 125 and a transition frequency of 150 MHz. The component operates within a junction temperature range of -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• Designed for low noise amplifier applications
• Utilizes silicon planar technology for reliability
• Provides high DC current gain for signal amplification

Single Bipolar Transistors Applications

• Low noise audio amplification stages
• General purpose switching circuits
• Small signal processing

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking and date code against official onsemi documentation to confirm authenticity. Ensure the part number suffix matches the specific binning or packaging requirements. Cross-reference the datasheet revision to confirm electrical characteristics align with design specifications before integration.

Single Bipolar Transistors Selection Notes

Select this component when a 25 V NPN transistor with moderate current handling is required. The TO-92 package suits through-hole prototyping and low-volume production. Consider the 150 MHz transition frequency for bandwidth limitations in high-speed designs compared to faster alternatives.

Single Bipolar Transistors Part Context

This part belongs to the BC238 series, which includes variants like BC237 and BC239 offering different voltage ratings. The BC238 specifically targets 25 V applications, distinguishing it from the higher voltage BC237. It serves as a general-purpose replacement for legacy NPN transistors in consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

BC238B and BC238C are direct functional equivalents within the same series, differing primarily in hFE binning grades rather than fundamental electrical limits.