BC307B

Single Bipolar Transistors Overview

The BC307B is a PNP silicon amplifier transistor manufactured by onsemi, housed in a TO-92 (TO-226) through-hole package. It features a maximum collector-emitter voltage of -45 Vdc and a continuous collector current rating of -100 mAdc. The device offers a DC current gain (hFE) ranging from 120 to 800 at specific test conditions. Key electrical parameters include a transition frequency (fT) typical of 280 MHz and a total device dissipation of 350 mW at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

• PNP silicon construction designed for amplifier applications
• High DC current gain with selectable ranges for the B variant
• Suitable for general-purpose switching and amplification tasks

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Low-noise audio pre-amplifier stages
• Switching applications requiring moderate current handling

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm packaging type, such as bulk box or tape and reel options. Ensure compliance with RoHS requirements if lead-free variants are necessary for the assembly process. Confirm availability status as standard production items may undergo lifecycle changes. Cross-reference pinout configurations to ensure compatibility with existing PCB footprints before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select the BC307B when a PNP transistor with high current gain and moderate voltage ratings is required. Compare hFE ranges against circuit requirements to ensure sufficient amplification. Consider thermal resistance values for heat dissipation planning in enclosed environments. Verify that the TO-92 package dimensions fit within the mechanical constraints of the target design.

Single Bipolar Transistors Part Context

This component belongs to the BC307 series of PNP silicon transistors produced by onsemi. It shares the same physical package and basic electrical limits as the BC307C, differing primarily in the guaranteed minimum and maximum DC current gain specifications. The series is widely used in discrete semiconductor designs requiring reliable small-signal performance.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the BC307C, which shares identical voltage and current ratings but offers different gain characteristics. Other PNP transistors with similar -45V VCEO and -100mA IC ratings in TO-92 packages may serve as functional alternatives if gain and frequency response requirements are met.