BC307C

Single Bipolar Transistors Overview

The BC307C is a PNP silicon amplifier transistor manufactured by onsemi, housed in a TO-92 (TO-226) through-hole package. It features a collector-emitter voltage of -45 Vdc and a continuous collector current of -100 mAdc. The device offers a minimum DC current gain of 420 at Ic = -2.0 mAdc and Vce = -5.0 Vdc. Its transition frequency is typically 280 MHz, with a total device dissipation of 350 mW at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

• High DC current gain suitable for low-level signal amplification
• Designed for audio and general-purpose amplifier applications
• Low noise figure characteristics for sensitive circuit stages

Single Bipolar Transistors Applications

• Audio pre-amplifier stages
• General-purpose small-signal amplification
• Low-noise front-end circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'C' to ensure the correct hFE binning level is obtained, as the BC307B variant has different gain specifications. Confirm RoHS compliance status if required, noting that Pb-Free packages are available under separate ordering codes such as BC307CG. Check component availability as standard versions may be discontinued or subject to supply constraints.

Single Bipolar Transistors Selection Notes

Select the BC307C when high current gain is required for low-current biasing conditions, specifically around 2 mA. Ensure the application operates within the -45 V collector-emitter limit and does not exceed the 350 mW power dissipation at ambient temperatures above 25°C without derating. Consider the TO-92 package thermal resistance for heat management in enclosed designs.

Single Bipolar Transistors Part Context

This component belongs to the BC307 series of PNP silicon transistors produced by onsemi. The series includes variants like BC307B and BC307C, differentiated primarily by their DC current gain ranges. These devices are designed for amplifier applications and utilize the standard TO-92 plastic encapsulation style.

Single Bipolar Transistors Replacement Considerations

BC307B serves as a direct pin-compatible alternative within the same family, offering lower minimum DC current gain specifications. Verify electrical parameter compatibility before substitution.

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the BC307C?

The BC307C has a minimum DC current gain (hFE) of 420 when measured at a collector current of -2.0 mAdc and a collector-emitter voltage of -5.0 Vdc.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter breakdown voltage (VCEO) for the BC307C is -45 Vdc.

Is the BC307C available in a lead-free package?

Yes, onsemi offers Pb-Free packages for this device, identified by the ordering suffix 'G', such as BC307CG.