BC308

Description：TRANS PNP 25V 0.1A TO-92-3
Series：-

SKU:34014c73136e Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

BC308 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 25V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC308

Description：TRANS PNP 25V 0.1A TO-92-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：25 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 2mA, 5V
Power - Max：500 mW
Frequency - Transition：130MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3

Single Bipolar Transistors datasheet and documents for BC308

BC308

Single Bipolar Transistors Overview

The BC308 is a PNP epitaxial silicon transistor designed for switching and amplifier applications. It features a collector-emitter voltage (VCEO) of -25 V, a continuous collector current (IC) of -100 mA, and a power dissipation (PC) of 500 mW at 25°C. The device exhibits a DC current gain (hFE) ranging from 120 to 800 depending on the classification, with a transition frequency (fT) of 130 MHz. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-92 package.

Single Bipolar Transistors Feature Summary

Epitaxial silicon construction optimized for low noise performance in audio and signal processing circuits
High DC current gain capability supporting efficient amplification across multiple hFE classifications
Robust thermal stability allowing operation up to a 150°C junction temperature

Single Bipolar Transistors Applications

Low noise pre-amplifier stages
General purpose switching circuits
Audio signal processing

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status and specific hFE binning requirements prior to integration. Ensure compliance with RoHS directives and verify lead frame material specifications if applicable to your manufacturing process.

Single Bipolar Transistors Selection Notes

Select based on required hFE binning (A, B, or C) to meet specific gain tolerances. Consider the -25 V VCEO limit for circuit design margins. Evaluate thermal management needs given the 500 mW dissipation rating in the TO-92 package. Compare against BC307 (-45 V) or BC309 (lower noise) variants if voltage or noise specs differ.

Single Bipolar Transistors Part Context

Part of the BC307/308/309 family of PNP epitaxial silicon transistors. The BC308 specifically targets general-purpose applications requiring moderate voltage handling and high gain, distinct from the higher voltage BC307 and lower noise BC309 variants.