Single Bipolar Transistors BC308A product image

BC308A

  • Description:TRANS PNP 25V 0.1A TO-92-3
  • Series:-

SKU:b421dee255c9 Category: Brand:

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BC308A is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 25V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC308A

  • Description:TRANS PNP 25V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:130MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC308A

BC308A

Single Bipolar Transistors Overview

The BC308A is a PNP silicon small-signal bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 25 V and a continuous collector current of 100 mA. The device has a transition frequency of 130 MHz and a maximum power dissipation of 500 mW. It is housed in a TO-92-3 through-hole package with a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration for signal amplification
  • Through-hole mounting via TO-92-3 package
  • High-frequency operation capability

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Switching applications requiring low current handling
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer lot and date code upon receipt, as this component is listed as obsolete or discontinued by the primary distributor. Confirm physical package integrity and pinout alignment with standard TO-92-3 specifications before integration into production assemblies to ensure compatibility with existing footprints.

Single Bipolar Transistors Selection Notes

Select this component when a PNP small-signal transistor with moderate voltage ratings and low noise characteristics is required. Ensure the design accommodates the 100 mA current limit and 500 mW power dissipation constraints. Consider thermal management requirements given the small plastic package size and limited heat sinking capability inherent to the TO-92 form factor.

Single Bipolar Transistors Part Context

This part belongs to the BC307/BC308/BC309 series of general-purpose NPN/PNP transistors. The 'A' suffix typically denotes a specific binning of DC current gain (hFE) ranges, offering tighter performance tolerances compared to standard variants within the same family line.

Single Bipolar Transistors Replacement Considerations

  • BC308B
  • BC308C
  • BC307A

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter voltage (Vceo) is 25 V.

Is the BC308A available in a surface-mount package?

No, the BC308A is specified for through-hole mounting in a TO-92-3 package.

What is the typical DC current gain range?

The minimum DC current gain (hFE) is 120 at Ic=2mA and Vce=5V.

BC308ABC308A

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