BC308ABU

Single Bipolar Transistors Overview

The BC308ABU is a PNP bipolar junction transistor (BJT) manufactured by onsemi, designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage (Vceo) of 25 V and a continuous collector current (Ic) of 100 mA. The device operates with a transition frequency (fT) of 130 MHz and has a power dissipation rating of 500 mW. It is housed in a TO-92-3 through-hole package. The DC current gain (hFE) is specified at a minimum of 120 under test conditions of Ic=2mA and Vce=5V.

Single Bipolar Transistors Feature Summary

• PNP transistor configuration suitable for low-voltage signal processing
• High-frequency performance with 130 MHz transition frequency
• Robust thermal capability with 150°C maximum junction temperature

Single Bipolar Transistors Applications

• General-purpose audio amplification stages
• Low-voltage switching circuits
• Signal conditioning modules

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'BU' against official datasheets to confirm packaging or tape-and-reel specifications, as standard listings often denote bulk TO-92 packages. Confirm component status, as this series may be discontinued or subject to last-time buy notices. Ensure compatibility with RoHS and REACH regulations if required for your manufacturing process. Cross-reference pinouts carefully to avoid misalignment during assembly.

Single Bipolar Transistors Selection Notes

Select this component when a PNP BJT with 25V breakdown and 100mA current capacity is required. The TO-92-3 package suits through-hole designs. Consider the hFE range for amplifier linearity needs. Verify that the 500mW power dissipation meets thermal requirements in the final enclosure. Check availability status due to potential end-of-life constraints.

Single Bipolar Transistors Part Context

The BC308A belongs to the BC307-BC309 family of small-signal PNP transistors from onsemi. These devices are widely used in consumer electronics and industrial control for basic switching and amplification tasks. The BC308A variant specifically offers standardized gain bins for consistent performance across production batches.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include BC308B or BC308C for similar electrical characteristics with different gain ranges. Generic equivalents like 2N5401 may be considered if pinout and voltage ratings align, though hFE specs may vary. Always verify package dimensions and thermal resistance before substitution.