BC327-040G

Single Bipolar Transistors Overview

The BC327-040G is a PNP silicon amplifier transistor from onsemi, housed in a TO-92 package. It features a collector-emitter voltage of -45 Vdc and continuous collector current of -800 mAdc. The device offers a DC current gain (hFE) range of 40 to 630 at IC = -100 mA, VCE = -1.0 V. Key electrical characteristics include a base-emitter on voltage of up to -1.2 Vdc and a collector-emitter saturation voltage of -0.7 Vdc. Thermal resistance junction-to-ambient is 200 °C/W, with an operating temperature range of -55 to +150 °C.

Single Bipolar Transistors Feature Summary

• PNP silicon construction for amplifier applications
• Lead-free packaging available
• Defined hFE binning for consistent gain performance

Single Bipolar Transistors Applications

• General purpose amplifier circuits
• Switching applications requiring PNP control
• Driver stages in audio or signal processing equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required packaging format, such as bulk or tape and reel. Confirm the presence of the 'G' suffix indicates lead-free compliance if required by assembly specifications. Ensure the marking code corresponds to the BC327-040 variant to guarantee the correct hFE binning range is received for the design.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate current handling and defined gain ranges is needed. The BC327-040 variant provides a minimum hFE of 40, suitable for applications where lower gain consistency is acceptable. Consider thermal dissipation limits and package constraints when designing the heat management strategy for the target circuit.

Single Bipolar Transistors Part Context

This part belongs to the BC327 family of PNP silicon transistors, which includes variants with different hFE bins (-16, -25, -40). The family shares identical maximum ratings and pin configurations but differs in current gain specifications. The BC327-040 specifically targets applications requiring a wider gain tolerance starting from a lower minimum value compared to higher-bin variants.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include BC327-16 and BC327-25, though their hFE ranges differ. Cross-brand replacements must match the TO-92 package, -45V VCEO rating, and -800mA IC capability. Verify that any alternative device meets the specific hFE requirements of the original design.

Single Bipolar Transistors FAQ

What is the DC current gain range for the BC327-040?

The DC current gain (hFE) ranges from 40 to 630 when measured at IC = -100 mA and VCE = -1.0 V.

Is the BC327-040G lead-free?

Yes, the 'G' suffix in the part number indicates that the device is supplied in a lead-free package.

What is the maximum power dissipation at 25°C ambient temperature?

The total power dissipation is 625 mW at an ambient temperature of 25°C.