BC327-25ZL1

Single Bipolar Transistors Overview

The BC327-25ZL1 is a PNP silicon amplifier transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It operates within a collector-emitter voltage range of -45 Vdc and supports a continuous collector current of -800 mAdc. The device features a maximum total power dissipation of 625 mW at 25°C ambient temperature, with a thermal resistance junction-to-ambient of 200 °C/W. Electrical characteristics include a DC current gain (hFE) ranging from 160 to 400 under specified test conditions, a base-emitter on voltage of up to -1.2 Vdc, and a collector-emitter saturation voltage of -0.7 Vdc. The transition frequency (fT) is typically 260 MHz.

Single Bipolar Transistors Feature Summary

• PNP silicon construction optimized for low-voltage amplifier and switching tasks
• High DC current gain classification (-25 suffix) ensuring reliable signal amplification
• Robust thermal performance with defined junction-to-case and junction-to-ambient resistance values
• Lead-free package availability compliant with environmental standards

Single Bipolar Transistors Applications

• General-purpose audio amplification stages
• Low-voltage switching circuits driving loads up to 800 mA
• Microcontroller output buffering for relay or LED drivers
• Signal processing in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix ZL1 corresponds to the Tape & Ammo Box shipping configuration as documented in the official datasheet. Confirm that the -25 designation aligns with the required hFE binning range of 160 to 400 for your circuit design. Ensure compatibility with TO-92 mounting requirements and check for any recent product change notices regarding lead-free compliance or marking updates.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate current handling and high gain is required. The -25 variant provides a guaranteed minimum hFE of 160, suitable for applications demanding consistent amplification factors. Consider the TO-92 package constraints for thermal management and verify that the -45 V collector-emitter rating exceeds the maximum operating voltage of the target circuit.

Single Bipolar Transistors Part Context

This part belongs to the BC327 series of PNP silicon transistors produced by onsemi. The series includes variants differentiated by gain bins (-16, -25, -40) and packaging options (Bulk, Tape & Reel, Tape & Ammo Box). The BC327-25ZL1 specifically denotes the -25 gain bin packaged in tape and ammo box format, intended for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

Direct parameter-equivalent substitutes include the BC327-25BU and BC327-25TA from onsemi. Other compatible replacements listed in distributor databases are the 2N4403BU and BC32740BU, though their gain specifications may differ. Verify pinout compatibility and thermal characteristics before substitution.

Single Bipolar Transistors FAQ

What is the DC current gain range for the BC327-25ZL1?

The BC327-25 variant has a DC current gain (hFE) range of 160 to 400 when tested at IC = -100 mA and VCE = -1.0 V.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is -45 Vdc when measured at IC = -10 mA and IB = 0.

How is the BC327-25ZL1 packaged?

The ZL1 suffix indicates the device is shipped in a Tape & Ammo Box configuration, with a standard shipping quantity of 2000 units per reel.