SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
BC32716TA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 45V 0.8A TO-92-3. Review the specifications below when checking this part for your BOM.
The BC32716TA is a PNP epitaxial silicon transistor from the BC327 series, manufactured by onsemi. It features a collector-emitter voltage of -45 V and a continuous collector current of -800 mA. The device operates with a junction temperature up to 150 °C and dissipates 625 mW of power. It utilizes a TO-92-3 package in an Ammo packing method. DC current gain (hFE) ranges from 100 to 250 at IC = -100 mA and VCE = -1 V. The transition frequency is 100 MHz.
Verify the specific hFE binning classification corresponding to the '16' suffix during procurement. Confirm that the TO-92-3 Ammo packaging aligns with automated assembly requirements. Ensure compatibility with the updated nomenclature standards following the Fairchild Semiconductor integration into onsemi systems.
Select this component when a PNP transistor with moderate current handling and defined gain bands is required. The BC32716TA offers a specific hFE range suitable for consistent amplification performance. Consider its thermal resistance and power dissipation limits for heat management in compact designs.
This part belongs to the BC327 family of PNP epitaxial silicon transistors. The family includes variants differentiated primarily by their DC current gain (hFE) classifications. The BC32716TA represents a specific gain bin within this lineup, sharing identical electrical ratings and physical package dimensions with other members like the BC327BU or BC32740TA.
The '16' suffix indicates the DC current gain (hFE) classification bin for the transistor.
Yes, the datasheet specifies that the device is lead-free.
The maximum collector-emitter breakdown voltage (BVCEO) is -45 V.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.