SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
BC32725BU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 45V 0.8A TO-92-3. Review the specifications below when checking this part for your BOM.
The BC32725BU is a PNP epitaxial silicon transistor from the BC327 series, manufactured by onsemi. It features a collector-emitter voltage (VCEO) of -45 V and a continuous collector current (IC) of -800 mA. The device operates with a maximum power dissipation of 625 mW at 25°C ambient temperature. Its DC current gain (hFE) falls within the 160 to 400 range under standard test conditions. The component utilizes a TO-92-3L through-hole package and supports junction temperatures up to 150°C.
Verify the specific hFE binning classification required for the application, as the BC32725BU corresponds to the '25' bin (160–400). Confirm that the TO-92-3L bulk packaging aligns with assembly requirements. Ensure compliance with RoHS directives if applicable to the target market. Validate thermal management strategies given the 625 mW power dissipation limit in free air.
Select this component when a PNP transistor with moderate current handling and defined gain ranges is needed. It serves as the direct complementary pair to the BC337 or BC338 series. Consider the TO-92-3L package constraints for PCB layout. Verify that the -45 V breakdown voltage meets circuit requirements. Evaluate thermal resistance characteristics for high-duty cycle operations.
The BC32725BU belongs to the broader BC327 family of PNP epitaxial silicon transistors. This family includes variants distinguished by their DC current gain classifications, such as BC32716, BC32725, and BC32740. The 'BU' suffix indicates the TO-92-3L plastic package with bulk packing. These devices are widely used in general-purpose electronics requiring reliable amplification or switching capabilities.
BC32725TA
The BC32725BU has a DC current gain (hFE) range of 160 to 400 when measured at IC = -100 mA and VCE = -1 V.
Yes, the datasheet explicitly lists suitability for AF-driver stages and low-power output applications.
The maximum collector-emitter voltage (VCEO) is -45 V.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.