BC327ZL1G

Single Bipolar Transistors Overview

The BC327ZL1G is a PNP silicon epitaxial planar transistor designed for amplifier and switching applications. It features a maximum collector current of -800 mA, a collector-emitter breakdown voltage of -45 V, and a total power dissipation of 625 mW at 25°C ambient temperature. The device offers a DC current gain (hFE) range of 100 to 630 under standard test conditions. Its transition frequency (fT) is typically 260 MHz, with an output capacitance of 11 pF. Operating junction temperatures span from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Epitaxial planar PNP silicon construction optimized for general-purpose amplification and high-speed switching tasks.
• High continuous collector current capability supporting loads up to 800 mA.
• Wide DC current gain variation allowing selection based on specific circuit requirements.
• Lead-free package configuration compliant with environmental standards.

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• High-current driver stages for switching loads
• Complementary pairing with NPN transistors such as the BC337

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix ZL1G corresponds to the Tape & Ammo Box shipping format containing 2000 units per reel. Confirm that the G suffix indicates Pb-Free packaging status. Ensure the component marking matches the '327' identifier specified in the manufacturer's documentation for this specific variant.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 800 mA current handling and -45 V voltage rating is required. Consider the hFE binning options if specific gain ranges are necessary for the application. Verify thermal management requirements against the 625 mW dissipation limit and the 200 °C/W thermal resistance value provided in the datasheet.

Single Bipolar Transistors Part Context

This part belongs to the BC327 series of PNP amplifier transistors manufactured by onsemi. It serves as the complementary counterpart to the BC337 NPN transistor family. The device utilizes a TO-92 (TO-226AA) through-hole package style, providing a compact form factor suitable for general electronic designs requiring discrete bipolar junction transistors.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers include BC327-16, BC327-25, and BC327-40, which share the same electrical characteristics but differ in DC current gain specifications.

Single Bipolar Transistors FAQ

What is the pin configuration for the BC327ZL1G?

Viewed from the flat side of the TO-92 package, Pin 1 is the Collector, Pin 2 is the Base, and Pin 3 is the Emitter.

How does the BC327ZL1G relate to the BC337?

The BC327 is the PNP complementary device to the BC337 NPN transistor, designed for use in matched pairs within amplifier and switching circuits.

What is the typical transition frequency of this transistor?

The current-gain bandwidth product (fT) is typically 260 MHz when measured at a collector current of -10 mA and a collector-emitter voltage of -5.0 V.