BC337-16RL1G

Single Bipolar Transistors Overview

The onsemi BC337-16RL1G is an NPN silicon epitaxial planar transistor designed for amplifier applications. It features a collector-emitter voltage of 45 V and a continuous collector current of 800 mA. The device provides a DC current gain (hFE) range of 160 to 250 at IC = 100 mA, VCE = 1 V. Electrical characteristics include a maximum collector-emitter saturation voltage of 0.7 V at IC = 500 mA and IB = 50 mA. The component operates within a junction temperature range of -55°C to +150°C and utilizes a TO-92 package.

Single Bipolar Transistors Feature Summary

• Epitaxial planar silicon construction optimized for amplifier circuits
• High DC current gain with specified ranges for the -16 variant
• Low collector-emitter saturation voltage for efficient switching
• Lead-free packaging compliant with environmental standards

Single Bipolar Transistors Applications

• General-purpose amplifier stages
• Audio driver circuits
• Low-power output stages

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix RL1G confirms tape and reel packaging containing 2000 units per reel. Confirm the G suffix indicates lead-free status as defined in the manufacturer's documentation. Ensure the part number matches the specific hFE binning requirements for the -16 designation during procurement validation.

Single Bipolar Transistors Selection Notes

Select this component when a minimum DC current gain of 160 is required at 100 mA collector current. The device suits designs needing a 45 V collector-emitter breakdown voltage. Consider the TO-92 package constraints for thermal dissipation limits at ambient temperatures above 25°C. Verify compatibility with base drive currents relative to the specified saturation voltage conditions.

Single Bipolar Transistors Part Context

This part belongs to the BC337 family of NPN amplifiers manufactured by onsemi. The -16 suffix designates a specific DC current gain binning range distinct from standard or higher-gain variants. The RL1G suffix identifies the specific bulk packaging format intended for automated surface mount assembly processes.

Single Bipolar Transistors Replacement Considerations

BC337-16G: Identical electrical specifications and gain binning; differs only in non-reel packaging format.

Single Bipolar Transistors FAQ

What is the DC current gain range for the BC337-16?

The DC current gain (hFE) ranges from 160 to 250 when measured at a collector current of 100 mA and a collector-emitter voltage of 1 V.

Does the RL1G suffix affect the electrical performance?

No, the RL1G suffix specifies the tape and reel packaging configuration and lead-free status but does not alter the electrical parameters or gain binning of the transistor.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 0.7 V, measured under conditions of a collector current of 500 mA and a base current of 50 mA.