BC33716TA

Single Bipolar Transistors Overview

The onsemi BC33716TA is an NPN silicon epitaxial planar bipolar junction transistor designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of 45 V, a continuous DC collector current of 800 mA, and a power dissipation rating of 625 mW at 25°C ambient temperature. The device offers a high DC current gain (hFE) ranging from 160 to 250, with a transition frequency of 100 MHz. It operates within a junction temperature range up to +150°C and is housed in a lead-free TO-92-3 kinked lead package suitable for through-hole mounting.

Single Bipolar Transistors Feature Summary

• High DC current gain classification (HFE/250) ensures efficient signal amplification with reduced base drive requirements.
• Robust thermal performance supports operation at junction temperatures up to +150°C for reliable circuit functionality.
• Low saturation voltage characteristics facilitate effective low-power switching operations.

Single Bipolar Transistors Applications

• Audio driver stages
• General-purpose amplifiers
• Low-power output stages

Single Bipolar Transistors Procurement Notes

Verify the specific HFE binning (160-250) against design requirements, as gain varies within this range. Confirm the TO-92-3 kinked lead package orientation matches PCB footprint constraints. Ensure compliance with RoHS directives if required by the final assembly specifications. Cross-reference datasheet electrical limits with actual operating conditions to prevent exceeding absolute maximum ratings.

Single Bipolar Transistors Selection Notes

Select this component when a moderate-gain NPN transistor is needed for linear amplification or switching. The HFE/250 bin provides higher gain than standard variants, reducing base current needs. Consider the 625 mW power dissipation limit and thermal resistance when designing heat management solutions. Compare against complementary PNP devices like the BC327 series for push-pull configurations.

Single Bipolar Transistors Part Context

This part belongs to the BC337 family of NPN transistors manufactured by onsemi. It shares the same physical package and core electrical structure as other gain-binned variants such as BC33725TA and BC33740TA. The primary distinction lies in the guaranteed DC current gain range, which dictates suitability for specific amplification tasks without requiring external compensation networks.

Single Bipolar Transistors Replacement Considerations

BC33725TA and BC33740TA are direct pin-compatible alternatives within the same series, offering different hFE gain bins. Verify that the replacement's gain range aligns with the circuit's biasing requirements. Other generic NPN transistors with similar VCEO, IC, and package specifications may serve as substitutes if electrical parameters are validated.