BC33725_J35Z

Single Bipolar Transistors Overview

The BC33725_J35Z is an NPN silicon epitaxial bipolar junction transistor manufactured by onsemi. It features a TO-92-3 kinked lead through-hole package with three pins. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 45 V, a maximum collector-base voltage (VCBO) of 50 V, and a maximum emitter-base voltage (VEBO) of 5 V. The device supports a continuous DC collector current of 800 mA and a power dissipation of 625 mW. It offers a minimum DC current gain (hFE) of 160 at 100 mA and 1 V, with a transition frequency (fT) of 100 MHz. Operating temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• NPN silicon epitaxial construction for reliable switching and amplification
• High DC current gain ensuring efficient signal control
• Robust thermal performance with high maximum operating temperature

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Switching applications in consumer electronics
• Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against official onsemi documentation to confirm pinout orientation and tape/reel specifications. Ensure the procurement channel provides valid RoHS compliance data as indicated in distributor listings. Cross-reference the part number with the manufacturer's latest datasheet to confirm availability of the TO-92-3 kinked lead variant. Confirm that the supplier can provide traceability documents required for quality assurance processes.

Single Bipolar Transistors Selection Notes

Select this component when a general-purpose NPN transistor with moderate voltage ratings and high current gain is required. The 45 V VCEO rating suits low-voltage logic interfacing and audio applications. Consider the 800 mA collector current capability for driving small loads. The TO-92-3 package is suitable for prototyping and low-volume production where through-hole mounting is preferred over surface mount alternatives.

Single Bipolar Transistors Part Context

This part belongs to the BC337 series of NPN transistors produced by onsemi. The series is widely used in general-purpose electronic designs. The BC33725 variant specifically denotes a binning category for DC current gain, typically ranging from 160 to 400. This distinguishes it from other variants like BC337-16 or BC337-40 which have different gain ranges. The J35Z suffix likely indicates specific packaging or testing criteria defined by the manufacturer.

Single Bipolar Transistors Replacement Considerations

BC33725BU

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the BC33725_J35Z?

The minimum DC current gain (hFE) is 160, measured at a collector current of 100 mA and a collector-emitter voltage of 1 V.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 45 V.