BC337_J35Z

Single Bipolar Transistors Overview

The BC337_J35Z is an NPN silicon epitaxial planar transistor manufactured by onsemi, designed for switching and audio frequency amplifier applications. It features a maximum collector current of 800 mA and a collector-emitter voltage rating of 45 V. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 625 mW of power. Packaged in a TO-92-3 through-hole configuration, it offers high DC current gain suitable for driver stages.

Single Bipolar Transistors Feature Summary

• Designed for general-purpose switching and audio frequency amplifier applications
• High DC current gain with specific binning for consistent performance
• Compatible with complementary PNP devices for push-pull configurations

Single Bipolar Transistors Applications

• Audio driver stages
• Low-power output amplifiers
• General-purpose switching circuits

Single Bipolar Transistors Procurement Notes

Verify the suffix J35Z against official onsemi documentation to confirm the specific hFE binning and packaging details. Ensure the component matches the required electrical characteristics for the target circuit design before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN BJT with moderate current handling and high gain is required. Consider thermal management for continuous operation near the 625 mW limit. Verify compatibility with existing PCB footprints for the TO-92-3 package.

Single Bipolar Transistors Part Context

This part belongs to the BC337 series of NPN transistors, widely used in consumer electronics and industrial control. It serves as a common replacement for legacy designs requiring reliable small-signal amplification or switching capabilities in low-voltage environments.

Single Bipolar Transistors Replacement Considerations

Check datasheets for equivalent parts from other manufacturers such as Fairchild or STMicroelectronics. Ensure pinout compatibility and verify that alternative components meet the same voltage, current, and gain specifications.