Single Bipolar Transistors BC337A_J35Z product image

BC337A_J35Z

$0.06
  • Description:TRANS NPN 45V 0.8A TO-92-3
  • Series:-

SKU:3bb44810f9b9 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BC337A_J35Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.8A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC337A_J35Z

  • Description:TRANS NPN 45V 0.8A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC337A_J35Z

BC337A_J35Z

Single Bipolar Transistors Overview

The onsemi BC337A_J35Z is an NPN silicon epitaxial planar transistor housed in a TO-92 (TO-226AA) through-hole package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 800 mA. The device offers a minimum DC current gain (hFE) of 160 at a collector current of 100 mA, with a transition frequency of 100 MHz. It operates within a junction temperature range up to 150 °C and includes lead-free construction compliant with RoHS standards.

Single Bipolar Transistors Feature Summary

  • High DC current gain suitable for amplification applications
  • Low collector-emitter saturation voltage for efficient switching
  • Complementary pairing available with BC327 series PNP transistors

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • Audio amplifier driver stages
  • Low power output stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against official datasheets to confirm pinout orientation and tape-and-reel specifications. Ensure the selected variant matches the required hFE binning class for the intended circuit design. Cross-reference manufacturer documentation for any updates regarding lead-free compliance or environmental declarations prior to final procurement.

Single Bipolar Transistors Selection Notes

Select this component when a general-purpose NPN transistor with moderate current handling and high gain is required. It serves as a direct complement to the BC327 series for push-pull configurations. Consider thermal management requirements if operating near the maximum current limits, as power dissipation is constrained by the TO-92 package size.

Single Bipolar Transistors Part Context

This part belongs to the widely used BC337 family of NPN bipolar junction transistors. It is designed for general-purpose amplification and switching tasks. The device is manufactured using epitaxial silicon technology to ensure reliable performance across standard industrial and consumer electronics applications.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include BC337 variants from other manufacturers such as NXP or Fairchild, provided they meet the same electrical ratings and package dimensions. Verify compatibility with complementary BC327 devices if used in paired configurations.

BC337A_J35ZBC337A_J35Z
$0.06
Buy Now