Single Bipolar Transistors BC337BU product image

BC337BU

$0.02
  • Description:TRANS NPN 45V 0.8A TO-92-3
  • Series:-

SKU:ba098de01164 Category: Brand:

  
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BC337BU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.8A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC337BU

  • Description:TRANS NPN 45V 0.8A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC337BU

BC337BU

Single Bipolar Transistors Overview

The BC337BU is an NPN silicon epitaxial planar transistor manufactured by onsemi, designed for general-purpose switching and amplifier applications. It features a maximum collector current of 0.8 A and a collector-emitter voltage rating of 45 V. The device operates within a temperature range of -55°C to +150°C junction temperature. Key electrical parameters include a gain bandwidth product (fT) of 100 MHz and a DC current gain (hFE) up to 630. It is housed in a TO-92-3 through-hole package with a power dissipation capability of 625 mW.

Single Bipolar Transistors Feature Summary

  • Epitaxial silicon construction ensures high reliability and consistent performance characteristics across operating conditions.
  • Low collector-emitter saturation voltage facilitates efficient switching with minimal power loss during conduction.
  • High DC current gain allows for effective signal amplification and driver transistor functionality in low-power circuits.

Single Bipolar Transistors Applications

  • General-purpose switching circuits requiring moderate current handling capabilities
  • Audio frequency amplifier stages and pre-driver applications
  • Complementary pairing with PNP transistors such as the BC327 series

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout orientation and gain binning, as variations exist within the BC337 family. Confirm RoHS compliance status and lead-free packaging details directly from the manufacturer's documentation. Ensure the ordering part number matches the required hFE range for your specific application design constraints.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with 800 mA continuous collector current and 45 V breakdown voltage is required. Consider the TO-92-3 package for through-hole mounting requirements. Evaluate the hFE range specifications to ensure compatibility with base drive circuitry. Compare thermal resistance values if heat dissipation is a critical design factor in the target enclosure.

Single Bipolar Transistors Part Context

This component belongs to the widely used BC337/BC327 complementary transistor family, established for robust general-purpose electronics. It serves as a standard solution for discrete amplification and switching tasks in consumer and industrial equipment. The BU suffix typically denotes a specific manufacturing lot or packaging configuration within the broader BC337 product line offered by onsemi.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include BC337-16G, BC337-25G, and BC337-40G for matched gain bins. Other compatible equivalents are BC337ABU and BC337ZL1, provided pinouts and electrical ratings align with the original design requirements.

BC337BUBC337BU
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