Single Bipolar Transistors BC338-25ZL1G product image

BC338-25ZL1G

$0.07
  • Description:TRANS NPN 25V 0.8A TO92
  • Series:-

SKU:d8ad872b1e3b Category: Brand:

  
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BC338-25ZL1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 25V 0.8A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC338-25ZL1G

  • Description:TRANS NPN 25V 0.8A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:210MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC338-25ZL1G

BC338-25ZL1G

Single Bipolar Transistors Overview

The BC338-25ZL1G is an NPN silicon amplifier transistor manufactured by onsemi. It features a collector-emitter voltage of 25 Vdc and a continuous collector current of 800 mAdc. The device provides a DC current gain (hFE) ranging from 160 to 400 at IC = 100 mA, VCE = 1.0 V. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 625 mW at 25°C ambient. The component utilizes a TO-92 package with lead-free construction.

Single Bipolar Transistors Feature Summary

  • Lead-free package construction compliant with environmental standards
  • High DC current gain suitable for linear amplification applications
  • Robust thermal performance with defined junction-to-case resistance

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Switching applications requiring low saturation voltage
  • Audio signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix ZL1G corresponds to the Ammo Box packaging configuration containing 2000 units per box. Confirm that the 'G' designation indicates Pb-Free compliance as documented in the manufacturer's ordering information table. Ensure the marking code matches the '8-25' identifier specified for this variant.

Single Bipolar Transistors Selection Notes

Select this component when a 25 V collector-emitter breakdown voltage is required alongside high current handling capabilities. The BC338-25ZL1G offers higher hFE than standard BC337 variants, making it suitable for sensitive amplification tasks. Consider the TO-92 through-hole package constraints for board layout requirements.

Single Bipolar Transistors Part Context

This part belongs to the BC337 family of NPN silicon transistors designed for amplifier applications. The BC338-25 variant specifically denotes a 25 V rating, distinguishing it from the 45 V BC337 and other voltage-rated siblings like the BC337-16 or BC337-40 within the same product line.

Single Bipolar Transistors Replacement Considerations

BC338-25ZL1

Single Bipolar Transistors FAQ

What is the DC current gain range for the BC338-25?

The minimum DC current gain (hFE) is 160 and the maximum is 400 when measured at IC = 100 mA and VCE = 1.0 V.

How is the BC338-25ZL1G packaged?

It is supplied in an Ammo Box containing 2000 units per box.

What does the marking '8-25' indicate on the device?

The marking '8-25' identifies the device as the BC338-25 model within the TO-92 package.

BC338-25ZL1GBC338-25ZL1G
$0.07
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