Single Bipolar Transistors BC373 product image

BC373

$0.10
  • Description:TRANS NPN DARL 80V 1A TO92
  • Series:-

SKU:c174a442658b Category: Brand:

  
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BC373 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN DARL 80V 1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC373

  • Description:TRANS NPN DARL 80V 1A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1.1V @ 250µA, 250mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC373

BC373

Single Bipolar Transistors Overview

The BC373 is a high-voltage NPN silicon Darlington transistor manufactured by onsemi. It features an 80 Vdc collector-emitter breakdown voltage and supports a continuous collector current of 1.0 Adc. The device provides a DC current gain ranging from 10 to 160 at 250 mAdc, with a transition frequency of up to 200 MHz. Total power dissipation reaches 625 mW in TO-92 packages. Electrical characteristics include a maximum collector cutoff current of 100 nAdc and a saturation voltage of 1.1 Vdc under specified test conditions.

Single Bipolar Transistors Feature Summary

  • High-voltage capability with 80 Vdc collector-emitter breakdown rating
  • Darlington configuration providing high DC current gain
  • Suitable for general-purpose switching and amplification applications

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Amplifier stages requiring high input impedance
  • Driver circuits for loads operating within the 80 Vdc limit

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm package markings match the official datasheet specifications. Check RoHS compliance status as standard versions may differ from Pb-Free variants. Validate that the specific ordering suffix corresponds to the required packaging format before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when an NPN Darlington transistor with an 80 Vdc voltage rating is required. Ensure the application current does not exceed 1.0 Adc continuous limits. Consider thermal management requirements given the 625 mW power dissipation capability in the TO-92 package. Verify compatibility with base drive voltages against the specified saturation parameters.

Single Bipolar Transistors Part Context

This part belongs to the BC37x series of high-voltage NPN silicon Darlington transistors produced by onsemi. The series includes the BC372 variant, which shares identical physical dimensions but offers a higher 100 Vdc collector-emitter breakdown voltage compared to the BC373's 80 Vdc rating. Both devices utilize the same TO-92 (TO-226) leaded package style.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute: ZTX603 (Diodes Incorporated).

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage for the BC373?

The maximum collector-emitter breakdown voltage (VCEO) for the BC373 is 80 Vdc.

Does the BC373 support surface mount installation?

No, the BC373 is designed for through-hole installation using the TO-92 (TO-226) package style.

What is the typical DC current gain range for this device?

The DC current gain (hFE) ranges from a minimum of 10 to a maximum of 160 when tested at IC = 250 mAdc and VCE = 5.0 Vdc.

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