BC373G

Single Bipolar Transistors Overview

The BC373G is an NPN silicon high voltage Darlington transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 80 Vdc and supports a continuous collector current of 1.0 Adc. The device provides a DC current gain ranging from 8,000 to 160,000 at 250 mA with a saturation voltage of 1.1 Vdc maximum. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 625 mW in a TO-92 package.

Single Bipolar Transistors Feature Summary

• High voltage capability for robust circuit operation
• Darlington configuration providing substantial current amplification
• Lead-free compliant packaging option available

Single Bipolar Transistors Applications

• General purpose switching applications
• Driver circuits requiring high input impedance
• Amplifier stages utilizing Darlington topology

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance status. Confirm availability as standard bulk or tape-and-reel formats may vary. Ensure the component meets RoHS requirements if applicable to the design specifications before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high voltage rating combined with significant current gain is required. The TO-92 through-hole package suits prototyping and low-volume assembly. Evaluate thermal resistance limits to ensure adequate heat dissipation under continuous load conditions.

Single Bipolar Transistors Part Context

This part belongs to the BC372/BC373 series of high voltage NPN Darlington transistors. The 'G' suffix indicates a lead-free compliant version packaged in a TO-92 format. It serves as a discrete semiconductor solution for general-purpose amplification and switching tasks.

Single Bipolar Transistors Replacement Considerations

ZTX603 (Diodes Incorporated) is documented as a similar replacement part.