BC516_J35Z

Single Bipolar Transistors Overview

The BC516_J35Z is a PNP Darlington transistor manufactured by onsemi, designed for applications requiring extremely high current gain at currents up to 1 A. It features a collector-emitter voltage rating of 30 V and a continuous collector current of 1 A. The device utilizes a TO-92-3 (TO-226AA) through-hole package with a maximum power dissipation of 625 mW. It operates within a junction temperature range of -55°C to 150°C and has a transition frequency of 2.5 MHz.

Single Bipolar Transistors Feature Summary

• High current gain capability suitable for driving loads up to 1 A
• PNP Darlington configuration providing amplified switching performance
• Robust thermal design supporting operation up to 150°C junction temperature

Single Bipolar Transistors Applications

• High-gain amplification circuits
• Switching applications requiring substantial load drive
• General-purpose analog signal processing

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distribution channels due to the prevalence of counterfeit semiconductor devices. Confirm that the specific J35Z suffix matches the required tape-and-reel or bulk packaging specifications for your assembly process. Ensure compliance with RoHS and REACH environmental standards as defined in the manufacturer's documentation.

Single Bipolar Transistors Selection Notes

Select this component when a PNP Darlington structure is necessary to achieve high current gain without complex biasing networks. Consider the 30 V voltage limit and 1 A current capacity against circuit requirements. Evaluate the TO-92-3 package constraints regarding thermal management and board space compared to surface-mount alternatives.

Single Bipolar Transistors Part Context

This part belongs to the BC516 series of PNP Darlington transistors from onsemi. It serves as a discrete semiconductor solution for medium-power applications. The device complements other NPN counterparts in the family, offering complementary switching and amplification capabilities for push-pull configurations and general electronic designs.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for direct substitutes. Verify pinout compatibility and electrical parameter equivalence before substitution.