Single Bipolar Transistors BC517 product image

BC517

$0.03
  • Description:TRANS NPN DARL 30V 1A TO92
  • Series:-

SKU:6d2855c424fe Category: Brand:

  
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BC517 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN DARL 30V 1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC517

  • Description:TRANS NPN DARL 30V 1A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 100µA, 100mA
  • Current - Collector Cutoff (Max):500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30000 @ 20mA, 2V
  • Power - Max:625 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for BC517

BC517

Single Bipolar Transistors Overview

The onsemi BC517 is an NPN Darlington transistor housed in a TO-92 plastic package. It features a collector-emitter voltage of 30 V, a collector-base voltage of 40 V, and an emitter-base voltage of 10 V. The device supports a continuous collector current of 1.2 A with a total power dissipation of 625 mW at 25°C. Key electrical characteristics include a minimum DC current gain (hFE) of 30,000 at IC = 20 mA, a collector cut-off current of 100 nA, and a saturation voltage of 1 V at IC = 100 mA. Operating and storage junction temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • High DC current gain suitable for applications requiring extremely high amplification
  • Designed for operation at currents up to 1.0 A
  • Low voltage rating configuration

Single Bipolar Transistors Applications

  • Applications requiring very high amplification
  • Switching circuits utilizing high current gain

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as the BC517 is produced by multiple vendors including Fairchild Semiconductor, onsemi, and NXP. Confirm that the datasheet revision matches the required specifications, particularly regarding absolute maximum ratings and thermal characteristics. Ensure the component meets RoHS compliance requirements if applicable to the assembly process. Cross-reference the ordering suffixes with the supplier's catalog to confirm packaging and availability details.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with exceptionally high current gain is necessary. The BC517 is appropriate for low-voltage applications where a collector-emitter voltage of 30 V is sufficient. Consider the thermal resistance values when designing heat dissipation strategies, especially given the 625 mW power dissipation limit in the TO-92 package. Verify that the base drive current can support the required collector current given the high hFE.

Single Bipolar Transistors Part Context

The BC517 belongs to the family of NPN silicon Darlington transistors. It serves as the complement to the PNP BC516. The device is manufactured using process technology designed to ensure reliability and consistent performance across production batches. It is widely used in general-purpose amplifier and switching applications where high gain is critical.

Single Bipolar Transistors Replacement Considerations

The PNP complement is the BC516. Other similar NPN Darlington transistors include the MPSA13 and 2N5306, though electrical parameters such as current gain and voltage ratings should be verified against the specific application requirements before substitution.

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