BC517_J35Z

Single Bipolar Transistors Overview

The BC517_J35Z is an NPN silicon Darlington transistor manufactured by onsemi, housed in a TO-92 plastic package. It features a maximum collector-emitter voltage of 30 V and a continuous collector current of 0.5 A. The device provides a minimum DC current gain (hFE) of 30,000. Maximum power dissipation is rated at 625 mW. Operating temperatures range from -50 °C to +150 °C. The component includes a PNP complement, the BC516.

Single Bipolar Transistors Feature Summary

• High current capability with a maximum rating of 500 mA
• Very high DC current gain ensuring significant amplification
• Low voltage operation suitable for compact circuits

Single Bipolar Transistors Applications

• Applications requiring very high amplification
• General purpose switching and amplification circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against official onsemi documentation to confirm tape-and-reel packaging or binning specifications. Ensure the datasheet matches the exact part number to avoid discrepancies in electrical characteristics or mechanical dimensions compared to standard bulk versions.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is critical for signal amplification. The low voltage rating limits suitability for high-power applications. Consider the complementary BC516 if PNP functionality is also required in the design.

Single Bipolar Transistors Part Context

This part belongs to the BC517 series of NPN Darlington transistors. It is designed for general-purpose amplification where high gain is necessary. The TO-92 package allows for through-hole mounting, making it suitable for prototyping and various consumer electronics applications.

Single Bipolar Transistors Replacement Considerations

The BC516 serves as the direct PNP complement. Other NPN Darlington transistors with similar gain and voltage ratings may be considered, but pinout and thermal characteristics must be verified.