Single Bipolar Transistors BC546A B1G product image

BC546A B1G

  • Description:TRANS NPN 65V 0.1A TO-92
  • Series:-

SKU:1d70960b346b Category: Brand:

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BC546A B1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is TRANS NPN 65V 0.1A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC546A B1G

  • Description:TRANS NPN 65V 0.1A TO-92
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC546A B1G

BC546A B1G

Single Bipolar Transistors Overview

The BC546A B1G is an NPN silicon epitaxial planar transistor manufactured by Taiwan Semiconductor Corporation. It is housed in a TO-92 (TO-226AA) three-pin through-hole package designed for general-purpose amplification and switching applications. The device features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 65 V, with a collector-base voltage rating of 80 V. It operates within a junction temperature range of -65°C to +150°C and has a maximum power dissipation of 500 mW. The component meets RoHS 3 standards.

Single Bipolar Transistors Feature Summary

  • NPN polarity configuration suitable for low-noise signal processing
  • Epitaxial silicon construction for stable performance
  • Through-hole mounting capability via standard leaded package

Single Bipolar Transistors Applications

  • General-purpose small-signal amplification
  • Electronic switching circuits
  • Low-noise audio pre-amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific suffix B1G against the manufacturer's official datasheet to confirm pinout orientation and gain binning. Ensure the procurement source provides the original Taiwan Semiconductor Corporation documentation rather than third-party interpretations. Confirm RoHS 3 compliance status directly from the supplier's certificate of conformity prior to integration into regulated assemblies.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with 65V collector-emitter voltage and 100mA continuous current capacity is required. The TO-92 package is appropriate for prototyping or low-volume production where surface-mount space constraints are not critical. Consider the minimum DC current gain specifications if precise biasing stability is necessary for the target amplifier circuit design.

Single Bipolar Transistors Part Context

This part belongs to the BC546 series of small-signal NPN transistors. It shares the same physical footprint and basic electrical ratings as variants such as the BC546B and BC546C, which differ primarily in their DC current gain (hFE) classification bins. The BC546A typically represents a lower gain bin compared to the B and C variants within the same family.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes include the BC546B and BC546C from various manufacturers, provided the application can accommodate differences in hFE gain ranges. Cross-manufacturer equivalents such as the ON Semiconductor BC546BRL1G may be used if pinout compatibility and thermal limits are verified.

BC546A B1GBC546A B1G

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