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BC546B B1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is TRANS NPN 65V 0.1A TO-92. Review the specifications below when checking this part for your BOM.
The BC546B B1G is an NPN epitaxial silicon transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector-emitter voltage of 65 V and a continuous collector current rating of 100 mA. The device operates within a temperature range of -55°C to +150°C and has a power dissipation capacity of 500 mW. Key electrical parameters include a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, a transition frequency of 300 MHz, and a collector-emitter saturation voltage of 600 mV at specified currents.
Verify the manufacturer designation as Taiwan Semiconductor Corporation against official datasheets. Confirm the specific suffix 'B1G' corresponds to the intended packaging or binning requirements. Ensure RoHS compliance status matches project specifications. Cross-reference the part number with authorized distributors to confirm availability and authenticity.
Select this component for designs requiring high voltage tolerance up to 65 V and moderate current handling. The TO-92 package is suitable for through-hole mounting. Consider the hFE range of 200-200 for biasing stability. Evaluate thermal management needs given the 500 mW power dissipation limit in enclosed environments.
This component belongs to the BC546 series of NPN transistors, widely used in consumer electronics and industrial controls. It serves as a complement to PNP devices like the BC556. The BC546B variant specifically denotes a higher current gain bin compared to standard versions, enhancing performance in sensitive analog circuits.
The maximum collector-emitter voltage (VCEO) is 65 V.
No, the BC546B B1G is typically housed in a TO-92 through-hole package.
The transition frequency (fT) is 300 MHz.
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