Single Bipolar Transistors BC546B B1G product image

BC546B B1G

  • Description:TRANS NPN 65V 0.1A TO-92
  • Series:-

SKU:256f1e791acc Category: Brand:

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BC546B B1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is TRANS NPN 65V 0.1A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC546B B1G

  • Description:TRANS NPN 65V 0.1A TO-92
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC546B B1G

BC546B B1G

Single Bipolar Transistors Overview

The BC546B B1G is an NPN epitaxial silicon transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector-emitter voltage of 65 V and a continuous collector current rating of 100 mA. The device operates within a temperature range of -55°C to +150°C and has a power dissipation capacity of 500 mW. Key electrical parameters include a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, a transition frequency of 300 MHz, and a collector-emitter saturation voltage of 600 mV at specified currents.

Single Bipolar Transistors Feature Summary

  • NPN epitaxial silicon construction for reliable amplification
  • High DC current gain suitable for general-purpose applications
  • Low noise characteristics optimized for signal processing

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Switching applications in low-power systems
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation as Taiwan Semiconductor Corporation against official datasheets. Confirm the specific suffix 'B1G' corresponds to the intended packaging or binning requirements. Ensure RoHS compliance status matches project specifications. Cross-reference the part number with authorized distributors to confirm availability and authenticity.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage tolerance up to 65 V and moderate current handling. The TO-92 package is suitable for through-hole mounting. Consider the hFE range of 200-200 for biasing stability. Evaluate thermal management needs given the 500 mW power dissipation limit in enclosed environments.

Single Bipolar Transistors Part Context

This component belongs to the BC546 series of NPN transistors, widely used in consumer electronics and industrial controls. It serves as a complement to PNP devices like the BC556. The BC546B variant specifically denotes a higher current gain bin compared to standard versions, enhancing performance in sensitive analog circuits.

Single Bipolar Transistors Replacement Considerations

  • BC546B (ON Semiconductor)
  • BC546B (Diotec Semiconductor)

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC546B B1G?

The maximum collector-emitter voltage (VCEO) is 65 V.

Is the BC546B B1G available in a surface-mount package?

No, the BC546B B1G is typically housed in a TO-92 through-hole package.

What is the typical transition frequency of this transistor?

The transition frequency (fT) is 300 MHz.

BC546B B1GBC546B B1G

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