Single Bipolar Transistors BC546BG product image

BC546BG

  • Description:TRANS NPN 65V 0.1A TO92
  • Series:-

SKU:91abde512dce Category: Brand:

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BC546BG is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 65V 0.1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC546BG

  • Description:TRANS NPN 65V 0.1A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for BC546BG

BC546BG

Single Bipolar Transistors Overview

The BC546BG is an NPN epitaxial silicon transistor from the onsemi BC546-BC550 series, housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of 65V and a continuous collector current (IC) of 100mA. The device offers a DC current gain (hFE) range of 110 to 800 at IC=2mA and VCE=5V. Key electrical characteristics include a collector cutoff current (ICBO) max of 15nA at VCB=30V, and a transition frequency (fT) typical of 300MHz at IC=10mA. Maximum power dissipation is 500mW, with a junction temperature rating up to 150°C.

Single Bipolar Transistors Feature Summary

  • High voltage capability with 65V collector-emitter breakdown for robust switching applications
  • Wide DC current gain range (110-800) suitable for diverse amplification requirements
  • Low noise performance optimized for sensitive signal processing circuits
  • Lead-free construction compliant with environmental standards

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • Audio and RF amplifier stages
  • Low noise signal conditioning

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning grade required for your application, as the BC546B designation typically implies a gain range of 200-450 or similar, whereas the datasheet specifies a broader 110-800 range for the series. Confirm the TO-92 package variant matches your PCB footprint. Ensure lead-free compliance documentation is obtained if required by your manufacturing standards. Cross-reference pinouts with other manufacturers if substituting.

Single Bipolar Transistors Selection Notes

Select this component when a general-purpose NPN transistor with moderate voltage handling (65V) and low noise characteristics is needed. It is suitable for amplification tasks where current gain variability between 110 and 800 can be accommodated by the circuit design. Consider the 500mW power dissipation limit for thermal management in enclosed environments.

Single Bipolar Transistors Part Context

The BC546BG belongs to the widely used BC546-BC550 family of small-signal NPN transistors. This series is known for its versatility in consumer electronics and industrial control. The BC546 specifically denotes the 65V variant within the lineup, complemented by PNP counterparts like the BC556. It is a standard replacement for legacy designs requiring reliable NPN switching and amplification.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include BC546B from Fairchild/NXP and BC546B-AP from MCC. Verify that alternative sources meet the same 65V VCEO and 100mA IC specifications. Check if the hFE binning of the substitute matches the original design's gain requirements.

BC546BGBC546BG

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