BC546BTAR

Single Bipolar Transistors Overview

The BC546BTAR is an NPN silicon epitaxial planar transistor manufactured by onsemi. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 65 V. The device has a minimum DC current gain (hFE) of 200 and a transition frequency of 300 MHz. Maximum power dissipation is 500 mW, with a junction temperature rating up to 150 °C. It is housed in a TO-92-3 lead-free package.

Single Bipolar Transistors Feature Summary

• NPN epitaxial silicon construction for low noise performance
• High DC current gain suitable for amplification applications
• Lead-free packaging compliant with environmental directives

Single Bipolar Transistors Applications

• General purpose signal amplification
• Switching circuits
• Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking matches onsemi specifications. Confirm the package type is TO-92-3 and the suffix indicates tape and reel packaging. Check RoHS compliance status as it varies by production batch. Ensure the part number corresponds to the specific gain bin required for the design.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor with 65 V breakdown is needed. Compare hFE bins if precise gain control is critical. Consider thermal management for power dissipation limits. Verify compatibility with existing PCB footprints for TO-92 packages.

Single Bipolar Transistors Part Context

This part belongs to the BC546 series of small-signal NPN transistors. It is often used in conjunction with complementary PNP devices like the BC556. The series is widely available for general electronic applications requiring reliable switching and amplification.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include BC546BTA from other manufacturers. Verify pinout compatibility and electrical parameters such as Vceo and Ic before substitution.