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BC547B B1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is TRANS NPN 45V 0.1A TO-92. Review the specifications below when checking this part for your BOM.
The BC547B B1G is an NPN epitaxial silicon transistor manufactured by Taiwan Semiconductor Corporation. It features a collector-emitter breakdown voltage of 45 V and a maximum continuous collector current of 100 mA. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 500 mW of power. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at Ic=2mA, Vce=5V, and a transition frequency of 300 MHz. It is housed in a TO-92 package with formed leads.
Verify the manufacturer marking matches Taiwan Semiconductor Corporation specifications. Confirm the suffix B1G corresponds to the specific binning or packaging variant required. Ensure the component meets RoHS compliance standards if mandated by the design. Cross-reference the datasheet parameters against the actual batch documentation provided by the supplier to guarantee performance consistency.
Select this component when a general-purpose NPN transistor with 45V breakdown and 100mA current capacity is required. The BC547B offers a standardized hFE bin for predictable gain in amplifier designs. Consider the TO-92 through-hole package for prototyping or applications requiring manual assembly. Evaluate thermal management requirements based on the 500mW power dissipation limit in the final enclosure.
The BC547 series is a widely used family of small-signal NPN transistors. The 'B' suffix typically denotes a specific DC current gain range, distinguishing it from other variants like BC547A or BC547C. This component serves as a fundamental building block in discrete electronics, often replacing older equivalents in modern designs due to its reliability and availability in standard packages.
The maximum continuous collector current (Ic) is 100 mA.
Yes, it has a transition frequency (fT) of 300 MHz, making it suitable for RF and high-speed switching applications.
The junction temperature range is -55°C to +150°C.
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