BC547BTA

Single Bipolar Transistors Overview

The BC547BTA is an NPN epitaxial silicon transistor manufactured by onsemi, formerly Fairchild Semiconductor. It features a collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The device supports a maximum DC collector current (IC) of 100 mA and a power dissipation (PC) of 500 mW at 25°C ambient temperature. It utilizes a TO-92-3L package with kinked leads for ammo or tape-and-reel packing. The minimum DC current gain (hFE) for the B grade is 200, with a transition frequency (fT) of 300 MHz.

Single Bipolar Transistors Feature Summary

• NPN epitaxial silicon construction designed for switching and amplifier applications
• High-voltage capability with 45 V collector-emitter breakdown rating
• Low noise figure suitable for general-purpose signal processing
• Complementary to the BC557 PNP transistor within the same series

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Small-signal amplification stages
• Audio pre-amplifier inputs
• Logic interface buffers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official database to confirm packaging type and lead form. Ensure compatibility with the updated nomenclature standards following the integration of Fairchild Semiconductor into onsemi. Confirm that the component meets all required environmental compliance standards for the intended deployment region before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a low-cost NPN transistor with moderate voltage ratings and high current gain is required. The B-grade classification ensures a minimum hFE of 200, providing consistent performance for linear amplification tasks. Consider the TO-92 package constraints regarding thermal dissipation limits during continuous operation in enclosed environments.

Single Bipolar Transistors Part Context

This part belongs to the BC546/BC547/BC548/BC549/BC550 family of NPN epitaxial silicon transistors. The BC547 variant specifically offers a 45 V collector-emitter voltage rating, distinguishing it from the higher-voltage BC546 and lower-voltage BC548. The 'A' suffix indicates an Ammo pack configuration with molded leads, while 'B' denotes the specific DC current gain binning range.

Single Bipolar Transistors Replacement Considerations

• BC547BBU
• BC547CTA

Single Bipolar Transistors FAQ

What is the difference between the BC547BTA and BC547BBU?

Both parts share identical electrical characteristics and pinouts. The primary difference lies in the packaging method: the BC547BTA is supplied in an Ammo pack with molded leads, whereas the BC547BBU is supplied in bulk.

How does the BC547BTA relate to the BC557?

The BC547BTA is the NPN complement to the BC557 PNP transistor. They are designed to have matched electrical characteristics, making them suitable for use in complementary push-pull amplifier configurations.