Single Bipolar Transistors BC547BZL1G product image

BC547BZL1G

$0.09
  • Description:TRANS NPN 45V 0.1A TO92
  • Series:-

SKU:2081c083f9b8 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BC547BZL1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC547BZL1G

  • Description:TRANS NPN 45V 0.1A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Cut Tape (CT),Bulk,Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for BC547BZL1G

BC547BZL1G

Single Bipolar Transistors Overview

The BC547BZL1G is an NPN silicon amplifier transistor manufactured by onsemi. It features a collector-emitter voltage of 45 V, a continuous collector current of 100 mA, and a total device dissipation of 625 mW at 25°C. The component operates within a junction temperature range of -55 to +150 °C. Electrical characteristics include a minimum DC current gain (hFE) of 110 at IC = 10 mA and VCE = 5.0 V, with a typical current-gain-bandwidth product (fT) of 300 MHz.

Single Bipolar Transistors Feature Summary

  • NPN epitaxial silicon planar design for general-purpose amplification
  • Lead-free package construction compliant with environmental directives
  • High breakdown voltage capability suitable for signal processing applications

Single Bipolar Transistors Applications

  • General-purpose small-signal amplification
  • Switching circuits
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix ZL1G corresponds to the Ammo Box packaging configuration containing 2000 units per reel. Confirm the G suffix indicates Pb-Free status as defined in the manufacturer's ordering information table. Ensure compatibility with TO-92 mounting requirements before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN small-signal transistor with a 45 V collector-emitter rating is required. The B grading provides a specific DC current gain range starting at 110. Consider thermal derating factors if operating above 25°C ambient temperature due to the 625 mW power dissipation limit.

Single Bipolar Transistors Part Context

This part belongs to the BC546/BC547/BC548 series of NPN silicon amplifier transistors. The BC547 variant specifically offers a 45 V collector-emitter voltage rating, distinguishing it from the higher-voltage BC546 and lower-voltage BC548 models within the same family.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes within the same series include BC547A and BC547C, which share identical pinouts and maximum ratings but differ in DC current gain specifications.

BC547BZL1GBC547BZL1G
$0.09
Buy Now