Single Bipolar Transistors BC547CTAR product image

BC547CTAR

$0.03
  • Description:TRANS NPN 45V 0.1A TO-92-3
  • Series:-

SKU:cbed8fdf894c Category: Brand:

  
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BC547CTAR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC547CTAR

  • Description:TRANS NPN 45V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC547CTAR

BC547CTAR

Single Bipolar Transistors Overview

The BC547CTAR is an NPN silicon epitaxial planar transistor manufactured by onsemi. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. The device operates with a maximum power dissipation of 500 mW and has a transition frequency of 300 MHz. It utilizes a TO-92-3 through-hole package. The minimum DC current gain (hFE) is specified at 420 under test conditions of 2 mA collector current and 5 V collector-emitter voltage.

Single Bipolar Transistors Feature Summary

  • NPN epitaxial silicon planar design for general-purpose amplification
  • High DC current gain classification for signal processing applications
  • Lead-free packaging compliant with environmental directives

Single Bipolar Transistors Applications

  • General purpose amplifier circuits
  • Switching applications in low-power electronics
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer lot and date code upon receipt to ensure component authenticity. Confirm that the received package matches the TO-92-3 form factor and that the marking corresponds to the BC547C variant. Check for physical damage to leads before soldering. Ensure storage conditions remain within specified limits to prevent moisture absorption prior to reflow or wave soldering processes.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required for low-current switching or amplification tasks. The BC547C grade offers superior hFE compared to A or B grades, making it suitable for applications demanding consistent gain without extensive binning. Consider the 45 V rating for low-voltage logic interfacing and the TO-92 package for prototyping or low-volume production where surface mount alternatives are not mandatory.

Single Bipolar Transistors Part Context

This part belongs to the widely used BC546/547/548 series of small-signal NPN transistors. The 'C' suffix denotes a specific binning range for higher DC current gain compared to standard variants. The 'TAR' suffix typically indicates tape and reel packaging for automated assembly, distinguishing it from bulk or single-unit packaging formats found in other supply chain channels.

Single Bipolar Transistors Replacement Considerations

BC547CTF

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the BC547CTAR?

The minimum DC current gain (hFE) is 420, measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter breakdown voltage (VCEO) is rated at 45 V.

Does the BC547CTAR support lead-free manufacturing processes?

Yes, the device is available in lead-free packages that comply with RoHS environmental substance directives.

BC547CTARBC547CTAR
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