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BC548A B1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is TRANS NPN 30V 0.1A TO-92. Review the specifications below when checking this part for your BOM.
The BC548A B1G is an NPN silicon planar epitaxial bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a collector-emitter voltage (VCEO) of 30 V and a continuous collector current rating of 100 mA. The device operates within a temperature range of -65°C to +150°C and dissipates up to 500 mW of power. DC current gain (hFE) ranges from 110 to 220 at 2 mA and 5 V. It utilizes a TO-92-3 through-hole package.
This component is officially listed as End-of-Life (EOL) by the manufacturer. Verification of availability should focus on surplus distributors or secondary markets, as standard production channels are discontinued. Confirm RoHS compliance status and specific manufacturing date codes when sourcing from non-primary suppliers to ensure quality and authenticity.
Select this part for designs requiring a standard NPN transistor with moderate voltage ratings and defined gain bands. The 'A' suffix indicates a specific hFE binning range compared to other variants. Ensure the application fits within the 30 V collector-emitter limit and 100 mA current constraints. Consider the TO-92 package size for board layout compatibility.
Part of the BC548 series of general-purpose NPN transistors. The BC548A variant specifically targets applications needing higher minimum current gain than the standard BC548B or C types. It serves as a complementary device to the PNP BC558 series. Widely used in educational and industrial prototyping due to its standardized pinout and electrical characteristics.
The DC current gain (hFE) ranges from a minimum of 110 to a maximum of 220 when tested at 2 mA collector current and 5 V collector-emitter voltage.
No, the BC548A B1G is specified for through-hole installation in a TO-92-3 plastic package.
The maximum power dissipation is 500 mW at an ambient temperature of 25°C.
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