BC549C_J35Z

Single Bipolar Transistors Overview

The BC549C_J35Z is an NPN silicon epitaxial planar transistor manufactured by onsemi, housed in a TO-92 (SOT-54) plastic package. It is designed for general-purpose amplification and switching applications. The device features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 30 V. Key electrical characteristics include a maximum power dissipation of 500 mW at 25°C ambient temperature and a transition frequency of up to 100 MHz. The component supports a maximum operating junction temperature of +150 °C and includes a maximum collector-base voltage of 30 V and emitter-base voltage of 5 V.

Single Bipolar Transistors Feature Summary

• Low noise performance suitable for sensitive audio frequency stages
• General-purpose NPN bipolar junction transistor construction
• Through-hole mounting capability via standard TO-92 leaded package

Single Bipolar Transistors Applications

• Low noise pre-amplifier stages in audio equipment
• General purpose signal amplification circuits
• Electronic switching applications requiring low current handling

Single Bipolar Transistors Procurement Notes

Verify the specific suffix _J35Z against the official onsemi datasheet to confirm it denotes the standard BC549C electrical specifications without unique functional deviations. Ensure the ordering code matches the required tape-and-reel or bulk packaging format if applicable. Cross-reference the manufacturer part number with authorized distributors to confirm current availability and authenticity before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when low noise characteristics are required for small-signal amplification rather than high-power switching. The 30 V collector-emitter voltage limit defines its suitability for low-voltage logic and analog circuits. Consider the thermal constraints of the TO-92 package for power dissipation requirements in enclosed environments compared to surface-mount alternatives.

Single Bipolar Transistors Part Context

This component belongs to the BC549 series of NPN transistors, which are widely used as general-purpose devices. The 'C' suffix typically indicates a specific binning of DC current gain (hFE), ensuring tighter tolerance ranges compared to lower suffixes like 'A' or 'B'. The J35Z suffix likely refers to specific packaging or marking codes defined by onsemi for distribution channels.

Single Bipolar Transistors Replacement Considerations

• BC549C (Generic/Other Manufacturers)
• BC549B (Lower hFE bin)
• BC547C (Higher voltage rating variant)

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC549C_J35Z?

The maximum collector-emitter voltage (Vceo) is rated at 30 V.

Is the BC549C_J35Z suitable for high-frequency RF applications?

It is optimized for audio frequency low-noise stages, with a transition frequency of 100 MHz, making it less suitable for high-frequency RF compared to dedicated RF transistors.

What type of package does the BC549C_J35Z use?

It utilizes a TO-92 (SOT-54) plastic through-hole package.