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BC549CBK is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diotec Semiconductor. Its product description is TRANS NPN 30V 0.1A TO-92. Review the specifications below when checking this part for your BOM.
The BC549CBK is an NPN bipolar junction transistor manufactured by Diotec Semiconductor, designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage of 30 V and a maximum continuous collector current of 100 mA. The device operates within a junction temperature range of -55°C to 150°C and dissipates up to 500 mW of power. Key electrical characteristics include a DC current gain (hFE) minimum of 420 at 2 mA and 5 V, a transition frequency of 300 MHz, and a collector cutoff current of 15 nA. The saturation voltage is specified at 600 mV under standard test conditions.
Verify the specific suffix BK against official Diotec documentation to confirm packaging configuration, as suffixes often denote tape-and-reel quantities or specific handling requirements distinct from standard cut tapes. Ensure the component matches the RoHS3 compliance status indicated in manufacturer datasheets before integration into regulated assemblies.
Select this component when a high-gain NPN transistor is required for low-current amplification tasks. The BC549C variant offers significantly higher hFE compared to standard BC548 types, making it ideal for applications demanding precise control with minimal base drive current while maintaining compatibility with standard TO-92 mounting footprints.
This part belongs to the widely used BC54x series of small-signal NPN transistors. The 'C' designation indicates a specific binning for high current gain, distinguishing it from lower gain variants like the A or B grades. The BC549C series is commonly utilized in consumer electronics and industrial control boards where reliable linear operation and switching are necessary.
BC549B
The minimum DC current gain (hFE) is 420 when measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.
The maximum collector-emitter breakdown voltage (Vceo) is rated at 30 V.
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