Single Bipolar Transistors BC549CBU product image

BC549CBU

  • Description:TRANS NPN 30V 0.1A TO-92-3
  • Series:-

SKU:8e2b0c2851f7 Category: Brand:

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BC549CBU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 30V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC549CBU

  • Description:TRANS NPN 30V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC549CBU

BC549CBU

Single Bipolar Transistors Overview

The BC549CBU is an NPN silicon epitaxial planar transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It is housed in a TO-92 plastic package with kinked leads suitable for through-hole mounting. The device features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 100 mA. Key electrical characteristics include a DC current gain (hFE) range of 200 to 450, a transition frequency (fT) of 300 MHz, and a power dissipation capability of 500 mW at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

  • Low noise performance optimized for audio frequency stages
  • High DC current gain classification for sensitive amplification circuits
  • Complementary PNP counterpart available within the same series

Single Bipolar Transistors Applications

  • Low noise pre-amplifier stages in audio equipment
  • General purpose signal amplification
  • Electronic switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'BU' against the official onsemi datasheet to confirm packaging details and binning specifications. Ensure compatibility with existing PCB footprints for TO-92 kinked lead packages. Cross-reference hFE grading requirements with circuit design constraints to ensure the selected batch meets gain thresholds.

Single Bipolar Transistors Selection Notes

Select this component when low noise characteristics are critical for small signal processing. The high hFE range suits applications requiring significant current amplification without excessive base drive. Consider thermal management for power dissipation limits in enclosed environments compared to standard general-purpose variants.

Single Bipolar Transistors Part Context

This part belongs to the BC546–BC550 series of NPN transistors produced by onsemi. These devices share common structural characteristics but differ in gain grouping and voltage ratings. The BC549 variant specifically targets low noise applications, distinguishing it from higher voltage or standard gain models within the broader family lineup.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include BC549C from other manufacturers such as NXP or Fairchild, provided they match the TO-92 package and electrical parameters. Verify that alternative sources offer equivalent hFE binning and noise specifications to maintain circuit performance integrity.

BC549CBUBC549CBU

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