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BC556_J35Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 65V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for BC556_J35Z
- Description：TRANS PNP 65V 0.1A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
- Power - Max：500 mW
- Frequency - Transition：150MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
Single Bipolar Transistors datasheet and documents for BC556_J35Z
Single Bipolar Transistors Overview
The onsemi BC556_J35Z is a PNP silicon epitaxial planar transistor designed for amplifier applications. It features a maximum collector-emitter voltage of -65 V and a continuous collector current of -100 mA. The device operates within a junction temperature range up to +150°C and offers a transition frequency of 150 MHz. Packaged in a TO-92-3 through-hole configuration, it provides reliable performance for general-purpose signal processing tasks.
Single Bipolar Transistors Feature Summary
- PNP silicon epitaxial planar construction
- Suitable for audio frequency amplifier circuits
- Through-hole TO-92-3 package with kinked leads
Single Bipolar Transistors Applications
- Audio frequency amplification stages
- General-purpose switching circuits
- Signal conditioning modules
Single Bipolar Transistors Procurement Notes
Verify the specific suffix J35Z against official manufacturer documentation to confirm lead frame material and marking variations. Confirm RoHS compliance status directly with onsemi as packaging formats may differ by region. Ensure the procurement channel sources from authorized distributors to guarantee component authenticity and traceability.
Single Bipolar Transistors Selection Notes
Select this component when a PNP transistor with moderate gain and low noise characteristics is required for analog signal paths. Compare hFE ranges across different subtypes (A, B, C) if strict gain binning is necessary for the design. Verify thermal dissipation requirements against the 500 mW power rating at ambient conditions.
Single Bipolar Transistors Part Context
This part belongs to the BC556 series of PNP transistors manufactured by onsemi. The series is widely recognized for its use in low-power amplifier designs. The J35Z suffix typically denotes a specific tape-and-reel or bulk packaging variant intended for automated assembly processes.
Single Bipolar Transistors Replacement Considerations
- BC556BTA
- BC556BTFR
Single Bipolar Transistors FAQ
What is the maximum collector-base voltage for the BC556_J35Z?
The maximum collector-base voltage (VCBO) is specified as -80 V.
Is the BC556_J35Z suitable for high-frequency RF applications?
No, it is designed for audio frequency amplifiers with a transition frequency of 150 MHz, not for RF operations.
What is the minimum DC current gain (hFE) for this component?
The datasheet specifies a minimum hFE of 120 at IC = -2 mA and VCE = -5 V.
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