Single Bipolar Transistors BC556CBU product image

BC556CBU

  • Description:TRANS PNP 65V 0.1A TO-92-3
  • Series:-

SKU:4a40f9be93b2 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BC556CBU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 65V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC556CBU

  • Description:TRANS PNP 65V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC556CBU

BC556CBU

Single Bipolar Transistors Overview

The BC556CBU is a PNP silicon epitaxial planar transistor manufactured by onsemi, designed for general-purpose switching and audio frequency amplification applications. It utilizes a TO-92 plastic package with kinked leads for through-hole mounting. The device features a maximum collector-emitter voltage of 65 V, a collector-base voltage of 80 V, and an emitter-base voltage of 5 V. Continuous collector current is rated at 100 mA with a power dissipation of 500 mW. The 'C' suffix indicates a high DC current gain (hFE) range of 420 to 800. The transition frequency is 150 MHz, and the maximum operating junction temperature reaches +150 °C.

Single Bipolar Transistors Feature Summary

  • High DC current gain classification for precise biasing in amplifier circuits
  • Epitaxial silicon construction optimized for low noise performance
  • Robust thermal handling capability with a maximum junction temperature of +150 °C

Single Bipolar Transistors Applications

  • General purpose signal switching
  • Audio frequency amplification stages
  • Driver circuits for logic interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning associated with the 'C' suffix against the manufacturer's latest datasheet revision to ensure compatibility with circuit gain requirements. Confirm that the TO-92 kinked lead configuration matches the target PCB footprint constraints. Ensure RoHS compliance documentation aligns with regional regulatory standards for the intended deployment environment.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high current gain is required for linear amplification or stable switching operations. The BC556 series offers a direct complement to the BC546 NPN transistor family. Consider the 500 mW power dissipation limit and the 65 V voltage rating to ensure safe operation within the specific circuit's electrical boundaries and thermal management capabilities.

Single Bipolar Transistors Part Context

This part belongs to the widely adopted BC556/BC557/BC558 family of PNP transistors. These components are industry-standard replacements for older Motorola designs. The BC556 variant specifically targets applications requiring moderate voltage ratings and high gain, distinguishing it from the lower voltage BC558 or the intermediate BC557 variants within the same package type.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes include the BC556B, BC556A, and generic equivalents like the 2SA1015 where pinout compatibility is verified. Cross-manufacturer alternatives from NXP or Diodes Inc. may be used if electrical parameters match the specific gain bin requirements.

BC556CBUBC556CBU

Click on the inquiry