Single Bipolar Transistors BC556CTA product image

BC556CTA

$0.03
  • Description:TRANS PNP 65V 0.1A TO-92-3
  • Series:-

SKU:4950d0169f52 Category: Brand:

  
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BC556CTA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is TRANS PNP 65V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC556CTA

  • Description:TRANS PNP 65V 0.1A TO-92-3
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC556CTA

BC556CTA

Single Bipolar Transistors Overview

The BC556CTA is a PNP epitaxial silicon transistor manufactured by Fairchild Semiconductor, housed in a TO-92 package. It features a collector-emitter breakdown voltage of -45V and a continuous collector current of 100mA. The device offers a minimum DC current gain (hFE) of 420 at 2mA and 5V. Maximum power dissipation is 500mW, with an operating junction temperature range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • High DC current gain for precise amplification
  • Epitaxial silicon construction for reliability
  • Low noise characteristics suitable for audio stages

Single Bipolar Transistors Applications

  • Audio amplifier circuits
  • General-purpose switching applications
  • Signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the datasheet revision date and manufacturer origin upon receipt. Confirm the pinout configuration matches the specific Fairchild TO-92 standard. Ensure the component meets the required hFE binning specifications for the intended circuit design before integration.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required for low-level signal amplification. The -45V rating suits low-voltage logic interfaces. Compare against BC557 or BC558 variants if higher voltage ratings are necessary for the specific application environment.

Single Bipolar Transistors Part Context

This part belongs to the BC550 series of PNP transistors designed for switching and amplifier applications. It serves as the complementary counterpart to the NPN BC546 series. The 'C' suffix indicates a specific high-gain binning category within the broader BC556 product family.

Single Bipolar Transistors Replacement Considerations

  • BC556B
  • BC556A

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter breakdown voltage (Vceo) is -45V.

What is the typical DC current gain range?

The minimum DC current gain (hFE) is specified as 420 at Ic=2mA and Vce=-5V.

BC556CTABC556CTA
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