BC557C

Single Bipolar Transistors Overview

The onsemi BC557C is a PNP silicon planar epitaxial transistor designed for amplifier applications. It operates within a collector-emitter voltage of -45 V and supports a continuous collector current of -100 mA. The device features a DC current gain (hFE) ranging from 420 to 800 at an Ic of -2.0 mAdc. Electrical characteristics include a transition frequency (fT) of 320 MHz, a maximum power dissipation of 625 mW at 25°C ambient temperature, and an operating junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain suitable for sensitive amplification tasks
• Robust thermal performance with high junction temperature tolerance
• Lead-free package options available for environmental compliance

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Driver modules requiring signal amplification
• Switching applications in low-power electronics

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging type and lead-free status. Confirm that the component meets RoHS requirements if applicable to your assembly process. Ensure the selected variant matches the required shipping format, such as bulk or tape and reel, prior to finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain PNP transistor is required for small-signal amplification. The BC557C offers superior current gain compared to A and B series variants. Verify that the circuit design accommodates the -45 V collector-emitter breakdown voltage and the -100 mA maximum continuous collector current limits to ensure reliable operation under all expected load conditions.

Single Bipolar Transistors Part Context

This component belongs to the BC55x family of PNP silicon transistors manufactured by onsemi. The family includes BC556, BC557, and BC558 variants, differentiated primarily by their collector-emitter breakdown voltages. The BC557C specifically provides a -45 V rating with a high-gain C-series binning classification, distinguishing it from lower-voltage or lower-gain counterparts in the same product line.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the BC557B and BC557A from onsemi, which share identical pinouts but offer different gain ranges. Other manufacturers producing equivalent TO-92 PNP transistors with matching electrical ratings may also serve as functional replacements, provided the gain and voltage specifications align with the original design requirements.

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the BC557C?

The minimum DC current gain (hFE) for the BC557C is 420 when measured at a collector current of -2.0 mAdc and a collector-emitter voltage of -5.0 V.

What is the maximum power dissipation at 25°C?

The total device power dissipation is rated at 625 mW at an ambient temperature of 25°C. Above this temperature, the dissipation must be derated at a rate of 5.0 mW/°C.

Is the BC557C available in lead-free packages?

Yes, lead-free packages are available for the BC557C. These are typically identified by specific ordering suffixes such as 'G' in the part number, indicating compliance with lead-free manufacturing standards.