BC558B

Single Bipolar Transistors Overview

The BC558B is a PNP silicon epitaxial planar transistor designed for amplifier applications. It features a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device guarantees a minimum DC current gain (hFE) of 200 in the B grade classification. It is housed in a lead-free TO-92 package with three pins, suitable for general-purpose signal amplification tasks.

Single Bipolar Transistors Feature Summary

• PNP silicon epitaxial construction
• Lead-free package availability
• High DC current gain classification

Single Bipolar Transistors Applications

• Amplifier circuits
• General-purpose switching
• Signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as BC558B is produced by multiple vendors including ON Semiconductor, Fairchild, and Rochester Electronics. Confirm that the received component matches the required hFE binning and package type. Ensure compliance with RoHS standards if lead-free variants are specified for the design.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate voltage ratings and high current gain is required. The TO-92 package limits power dissipation to 625 mW, making it suitable for low-power applications. Verify the hFE range meets the circuit's biasing requirements before integration.

Single Bipolar Transistors Part Context

This component belongs to the BC558 series of PNP transistors. Variants such as BC558A and BC558C offer different current gain ranges. The BC558B specifically targets applications requiring a guaranteed minimum hFE of 200, distinguishing it from lower-gain alternatives in the same family.

Single Bipolar Transistors Replacement Considerations

Cross-reference with BC558BTAR or BC558BTA for equivalent specifications. Check datasheets for pinout compatibility and thermal characteristics when substituting.