BC558BRLG

Single Bipolar Transistors Overview

The onsemi BC558BRLG is a PNP silicon epitaxial transistor designed for amplifier applications. It features a maximum collector-emitter voltage of -30 Vdc and a continuous collector current rating of -100 mAdc. The device operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a minimum DC current gain (hFE) of 120 at -10 mAdc and -5.0 V, with a typical current-gain bandwidth product of 360 MHz.

Single Bipolar Transistors Feature Summary

• PNP silicon epitaxial construction optimized for amplifier circuits
• Lead-free package availability compliant with environmental standards
• High current-gain bandwidth product suitable for small-signal applications

Single Bipolar Transistors Applications

• Amplifier Transistors
• Small-signal amplification
• General-purpose switching

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix RL1G against official documentation to confirm tape and reel packaging and lead-free status. Ensure the component matches the required pinout configuration for TO-92 Style 17. Cross-reference datasheet revisions to validate electrical parameters before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -30 V collector-emitter voltage and -100 mA continuous current capability is required. The B series designation indicates a specific DC current gain range starting at a minimum of 120. Consider thermal resistance limits and safe operating area curves for high-power pulse applications.

Single Bipolar Transistors Part Context

This part belongs to the BC556/BC557/BC558 family of PNP silicon amplifier transistors manufactured by onsemi. The BC558 variant specifically provides a -30 V breakdown voltage, distinguishing it from the higher-voltage BC556 and BC557 models within the same series.

Single Bipolar Transistors Replacement Considerations

• BC558BZL1G
• BC558BRL1G