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BC558C_J35Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 30V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for BC558C_J35Z
- Description：TRANS PNP 30V 0.1A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：500 mW
- Frequency - Transition：150MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
Single Bipolar Transistors datasheet and documents for BC558C_J35Z
Single Bipolar Transistors Overview
The BC558C_J35Z is a PNP silicon small-signal bipolar junction transistor manufactured by onsemi. It is housed in a TO-92 (TO-226AA) through-hole package. The device features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 100 mA. It has a transition frequency of 150 MHz and a maximum power dissipation of 350 mW. The DC current gain (hFE) is binned to a minimum value of 420 at a collector current of 2 mA and Vce of 5 V.
Single Bipolar Transistors Feature Summary
- High DC current gain for sensitive amplification applications
- Suitable for general-purpose switching and linear operations
- Designed for low-noise performance
Single Bipolar Transistors Applications
- General purpose amplifier circuits
- Switching applications
- Low noise signal processing
Single Bipolar Transistors Procurement Notes
Verify the manufacturer marking and date code against official onsemi documentation. Confirm the suffix J35Z corresponds to the specific binning and packaging requirements. Ensure the component matches the TO-92 form factor and electrical specifications defined in the datasheet before integration.
Single Bipolar Transistors Selection Notes
Select this component when a high-gain PNP transistor is required for low-current applications. The 30V breakdown voltage and 100mA current limit define its operational boundaries. Consider the thermal constraints imposed by the 350mW power dissipation rating in the TO-92 package during circuit design.
Single Bipolar Transistors Part Context
This part belongs to the BC558 series of PNP transistors, which are widely used in consumer electronics and industrial control systems. The 'J35Z' suffix typically indicates specific manufacturing lot or binning codes managed by onsemi for quality control and performance consistency within the standard product line.
Single Bipolar Transistors Replacement Considerations
BC558C
Single Bipolar Transistors FAQ
What is the maximum collector-emitter voltage for the BC558C_J35Z?
The maximum collector-emitter voltage (Vceo) is 30 V.
Is the BC558C_J35Z available in a surface-mount package?
No, the BC558C_J35Z is specified as a through-hole device in a TO-92 package.
What is the typical application range for this transistor?
It is designed for general-purpose amplification and switching applications requiring high current gain.
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