BC558CBU

Single Bipolar Transistors Overview

The BC558CBU is a PNP epitaxial silicon transistor from the onsemi BC558 series, housed in a TO-92 (TO-226AA) through-hole package. It features a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device offers a DC current gain (hFE) range of 420 to 800 at Ic=2mA, Vce=5V. Key electrical parameters include a transition frequency of 150 MHz, collector-base breakdown voltage of 50 V, and emitter-base breakdown voltage of 5 V. Power dissipation is rated at 500 mW, with an operating temperature range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain classification for precise amplification control
• Epitaxial silicon construction for stable switching performance
• Through-hole TO-92 packaging for standard board integration

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Electronic switching applications
• Complementary pairing with NPN transistors in push-pull configurations

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking matches onsemi specifications. Confirm the suffix 'BU' corresponds to the specific tape-and-reel or bulk packaging variant required by your assembly line. Ensure RoHS compliance documentation aligns with regional regulatory requirements for electronic components.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required for low-level signal processing. The BC558C grade provides tighter hFE tolerances compared to A or B grades. Consider thermal management constraints due to the 500 mW power rating in the small TO-92 package during continuous operation.

Single Bipolar Transistors Part Context

Part of the widely used BC556/557/558/559 family of general-purpose bipolar junction transistors. The BC558 specifically denotes the PNP counterpart to the BC557 NPN transistor. This series is standardized for audio and RF small-signal applications across consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

• BC558CTA
• BC558CZL1

Single Bipolar Transistors FAQ

What is the DC current gain range for the BC558CBU?

The BC558C variant specifies a minimum DC current gain (hFE) of 420 and a maximum of 800 when measured at Ic=2mA and Vce=5V.

Is the BC558CBU suitable for high-frequency applications?

Yes, it has a transition frequency (fT) of 150 MHz, making it suitable for general-purpose RF and audio frequency amplification.