BC558CZL1G

$0.09

Description：TRANS PNP 30V 0.1A TO92
Series：-

SKU:68e77728fdd5 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

BC558CZL1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 30V 0.1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC558CZL1G

Description：TRANS PNP 30V 0.1A TO92
Series：-
Mfr：onsemi
Package：Tape & Box (TB)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：100nA
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：625 mW
Frequency - Transition：360MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
Supplier Device Package：TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for BC558CZL1G

BC558CZL1G

Single Bipolar Transistors Overview

The BC558CZL1G is a PNP silicon amplifier transistor manufactured by onsemi. It operates within a collector-emitter voltage of -30 V and supports a continuous collector current of -100 mA. The device features a DC current gain (hFE) ranging from 200 to 460 at -2.0 mA, with a transition frequency of 360 MHz. Thermal resistance is 200 °C/W junction-to-ambient. It utilizes a TO-92 package and functions across a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

PNP silicon construction for general-purpose amplification
High DC current gain suitable for low-noise applications
Lead-free compliant packaging available

Single Bipolar Transistors Applications

General-purpose amplifier circuits
Low-noise signal processing stages
Switching applications requiring high gain

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and shipping configuration. Ensure compatibility with RoHS directives if lead-free compliance is required for the assembly process. Cross-reference datasheet electrical limits with circuit requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a minimum hFE of 200 is required. Verify that the -30 V collector-emitter breakdown voltage meets the circuit's maximum operating conditions. Consider the thermal resistance characteristics for heat dissipation in enclosed environments.

Single Bipolar Transistors Part Context

This part belongs to the BC55x series of PNP silicon transistors designed for amplifier applications. The 'C' designation indicates a specific binning range for DC current gain. The 'ZL1G' suffix denotes the TO-92 package style and lead-free manufacturing process as defined by onsemi.