BC559_J35Z

Single Bipolar Transistors Overview

The BC559_J35Z is a PNP small-signal bipolar junction transistor manufactured by onsemi. It utilizes the TO-92 (TO-226AA) through-hole package configuration. The device supports a maximum continuous DC collector current of 100 mA and withstands a collector-emitter breakdown voltage of 30 V. Power dissipation capabilities are rated at 500 mW under standard operating conditions.

Single Bipolar Transistors Feature Summary

• PNP silicon construction for general-purpose switching and amplification
• Through-hole mounting via TO-92 leaded package
• Designed for low-power signal processing applications

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Small-signal amplification stages
• Driver circuits for low-power loads

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking and date code against official onsemi documentation to confirm authenticity. Ensure the component matches the specified PNP polarity and TO-92 physical dimensions. Cross-reference the specific suffix with the manufacturer's latest datasheet to validate electrical tolerances and packaging details before integration into production designs.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 30 V collector-emitter rating and 100 mA current capacity is required in a TO-92 package. Confirm that the thermal management requirements align with the 500 mW power dissipation limit. Verify compatibility with the intended circuit topology, ensuring proper biasing for the specified gain characteristics.

Single Bipolar Transistors Part Context

This part belongs to the BC55x series of PNP transistors from onsemi. These devices are widely used in consumer electronics and industrial control systems requiring reliable small-signal handling. The J35Z suffix typically denotes specific binning or packaging variations defined by the manufacturer.