BC618G

Description：TRANS NPN DARL 55V 1A TO92
Series：-

SKU:c7f07d9e12b4 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

BC618G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN DARL 55V 1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC618G

Description：TRANS NPN DARL 55V 1A TO92
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：55 V
Vce Saturation (Max) @ Ib, Ic：1.1V @ 200µA, 200mA
Current - Collector Cutoff (Max)：50nA
DC Current Gain (hFE) (Min) @ Ic, Vce：10000 @ 200mA, 5V
Power - Max：625 mW
Frequency - Transition：150MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for BC618G

BC618G

Single Bipolar Transistors Overview

The BC618G is a Bipolar Junction Transistor (BJT) manufactured by onsemi, configured as an NPN Darlington pair. It is designed for through-hole mounting in TO-92 (TO-226) packages. The device supports a maximum collector current of 1 A and offers a collector-emitter voltage rating of 55 V. Key electrical specifications include a transition frequency of 150 MHz and a power dissipation capacity of 625 mW. Thermal resistance from junction to case is rated at 83.3 °C/W. These parameters define the operational limits and performance characteristics of this specific discrete semiconductor component.

Single Bipolar Transistors Feature Summary

NPN Darlington configuration providing high current gain
Through-hole compatible TO-92 package design
Rated for 1 A continuous collector current operation

Single Bipolar Transistors Applications

General-purpose switching applications
Low-power amplifier circuits
Driver stages for relay or motor control

Single Bipolar Transistors Procurement Notes

Verify the exact package variant when ordering, as TO-92 may refer to standard or long-body configurations depending on the specific datasheet revision. Confirm RoHS compliance status and material composition declarations via official manufacturer documentation prior to integration. Ensure thermal management strategies align with the specified junction-to-case resistance values during PCB layout planning.

Single Bipolar Transistors Selection Notes

Select the BC618G when a high-gain NPN transistor is required for moderate current levels up to 1 A. The Darlington structure simplifies drive requirements compared to single-transistor alternatives. Consider the 55 V voltage limit and 625 mW power dissipation constraints relative to the target application's load conditions and ambient temperature environment.

Single Bipolar Transistors Part Context

This component belongs to onsemi’s portfolio of bipolar transistors, which includes various NPN, PNP, and complementary types. The BC618G specifically addresses needs for medium-power switching and amplification where high current gain is beneficial. It serves as a discrete solution within broader analog and power management designs.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for direct substitutes. Generic equivalents may differ in transition frequency or thermal resistance. Verify pinout compatibility and voltage ratings before substitution.