BC635,112

Single Bipolar Transistors Overview

The BC635,112 is a PNP silicon epitaxial planar transistor manufactured by NXP Semiconductors. It is housed in a TO-92 plastic package designed for general-purpose amplification and switching applications. The device features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 1 A. It operates within a junction temperature range up to 150 °C and complies with RoHS standards.

Single Bipolar Transistors Feature Summary

• Utilizes silicon epitaxial planar technology for reliable performance
• Designed for general-purpose amplification and switching tasks
• Encapsulated in a standard TO-92 plastic housing

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Electronic switching applications
• Consumer electronics signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific ordering code BC635,112 against official NXP documentation to confirm package type and electrical ratings. Ensure compliance with required environmental standards such as RoHS before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component for low-power PNP switching or amplification needs requiring an 80 V breakdown voltage. Consider the TO-92 package constraints for thermal management and board space when designing the circuit layout.

Single Bipolar Transistors Part Context

This part belongs to the BC63x series of NXP transistors, which are widely used in consumer electronics and industrial control systems. The series offers a balance of performance and cost-effectiveness for standard discrete semiconductor requirements.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in hFE ranges or thermal characteristics; verify compatibility with original specifications.