BC635RL1

Single Bipolar Transistors Overview

The onsemi BC635RL1 is an NPN silicon bipolar junction transistor housed in a TO-92 (Case 29) package. It features a maximum collector-emitter voltage of 45 Vdc and a continuous collector current rating of 1.0 Adc. The device supports a total power dissipation of 625 mW at 25°C ambient temperature, with a thermal resistance of 200 °C/W junction-to-ambient. Operating temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• NPN silicon construction for general-purpose amplification
• High collector current capability up to 1 A
• Low voltage operation with 45 V breakdown rating
• Lead-free compliant packaging available

Single Bipolar Transistors Applications

• Driver stages of audio/video amplifiers
• General-purpose switching applications
• Linear amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix RL1G against the datasheet to confirm lead-free status and tape-and-reel packaging specifications. Ensure the component matches the required electrical characteristics for the intended circuit design before procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling within a low-voltage envelope. Consider the thermal resistance and power dissipation limits when designing heat management solutions for continuous operation scenarios.

Single Bipolar Transistors Part Context

This part belongs to the BC63x series, which includes complementary PNP transistors such as the BC636, BC638, and BC640. The series is designed for medium-power applications requiring reliable performance in consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

BC635RL1G serves as the direct lead-free replacement variant within the same package and electrical specification profile.